Memristor MOS Content Addressable Memory (MCAM) Design Using 22nm VLSI Technology

“ Memristor & Content Addressable Memory ”

-Memristor is the fourth fundamental passive element after resistor, inductor and capacitor. Memristor is memory resistor which is two terminal device. This semiconductor device is statistically proved by a student in china Leon Chua in 1971. And discovered by scientist. R.Stanley Williams and its team in April 30,2008 in lab of HP. It consist a semiconductor of titanium dioxide in which one ha...

Improved High Speed/Low Complexity Memristor-based Content Addressable Memory (MCAM) Cell

This paper provides new approach for nonvolatile Memristor-based Content Addressable Memory MCAM cell using memristor with CMOS processing technology in order to get high speed read/write operations within high packing density and low power dissipation. The proposed cell uses only two memristors as a memory cell and CMOS controlling circuitry which uses latching to decrease time required for wr...

Delayed Switching Applied to Memristor Content Addressable Memory Cell

Memristor is short for memory resistor, which provides a functional relation between flux and charge. Professor Leon Chua named and formulated it in his paper "Memristor—The Missing Circuit Element" in 1971. The memristor has a special effect, ‘the delayed switching effect’, which is the memristor switching takes place with a time delay. Content addressable memory (CAM) is a type of associative...

TECHNOLOGY MAPPING FOR CIRCUIT OPTIMIZATION USING CONTENT-ADDRESSABLE MEMORY by

Design and Analysis of Content Addressable Memory

The Content addressable Memory (CAM) is high speed memories that are used in high speed networks, lookup tables and so on. The data to be searched will be compared with the data stored in the CAM cell and the address of the cell will be returned for the matched data. The parallel search operation in the memory is the important feature which improves the speed of search operation in CAM cells. H...